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Package Marking and Ordering Information
Part Number
IRLS640A
Top Mark
IRLS640A
Package
TO-220 F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics (T C =25 ℃ unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BV DSS
Drain-Source Breakdown Voltage
200
--
--
V
V GS =0V,I D =250 μ A
Δ BV/ Δ T J
Breakdown Voltage Temp. Coeff.
--
0.17
--
V/ ℃
I D =250 μ A
See Fig 7
V GS(th)
I GSS
I DSS
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
1.0
--
--
--
--
--
--
--
--
--
2.0
100
-100
10
100
V
nA
μ A
V DS =V GS , I D =250 μ A
V GS =20V
V GS =-20V
V DS =200V
V DS =160V,T C =125 ℃
R DS(on)
g fs
Static Drain-Source
On-State Resistance
Forward Transconductance
--
--
--
13.3
0.18
--
?
S
V GS =5V,I D =4.9A
V DS =40V,I D =4.9A
④
④
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
--
--
--
1310 1705
200 250
95 120
pF
V GS =0V,V DS =25V,f =1MHz
See Fig 5
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
--
--
--
--
--
--
11
8
46
15
40
6.8
30
25
100
40
56
--
ns
nC
V DD =100V,I D =18A,
R G =4.6 ?
See Fig 13
V DS =160V,V GS =5V,
I D =18A
④⑤
Q gd
Gate-Drain(“Miller”) Charge
--
18.6
--
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
I S
I SM
V SD
t rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
①
④
--
--
--
--
--
--
--
224
18
63
1.5
--
A
V
ns
Integral reverse pn-diode
in the MOSFET
T J =25 ℃ ,I S =9.8A,V GS =0V
T J =25 ℃ ,I F =18A
Q rr
Reverse Recovery Charge
--
1.55
--
μ C
di F /dt=100A/ μ s
④
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=1mH, I AS =9.8A, V DD =50V, R G =27 ? , Starting T J =25 ℃
③ I SD ≤ 18A, di/dt ≤ 260A/ μ s, V DD ≤ BV DSS , Starting T J =25 ℃
④ Pulse Test : Pulse Width = 250 μ s, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
?1999 Fairchild Semiconductor Corporation
IRLS640A Rev. C0
2
www.fairchildsemi.com
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